product summary part number bv dss r ds(on) i d irh9230 -200v 0.8 w -6.5a features: n radiation hardened up to 1 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron t olerant n identical pre- and post-electr ical t est conditions n repetitive avalanche rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed provisional data sheet no. pd-9.1391 pre-radiation notes: see page 4 -200 v olt, 0.8 w w w w w , rad hard hexfet international rectifiers p-channel rad hard technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 rads (si). under identical pre- and post-radiation test conditions, international rectifiers p-channel rad hard hexfets retain identical electrical specifications up to 1 x 10 5 rads (si) total dose. no compensation in gate drive circuitry is required. these devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. single event effect (see) testing of international rectifier p-channel rad hard hexfets has demonstrated virtual immunity to see failure. since the p- channel rad hard process utilizes international rectifiers patented hexfet technology, the user can expect the highest quality and reliability in the industry. p-channel rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. o c a absolute maximum ratings parameter irh9230 units i d @ v gs = -12v, t c = 25c continuous drain current -6.5 i d @ v gs = -12v, t c = 100c continuous drain current -4.1 i dm pulsed drain current ? -26 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.2 w/k ? v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 330 mj i ar avalanche current ? -6.5 a e ar repetitive avalanche energy ? 7.5 mj dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead t emperature 300 (0.063 in. (1 .6mm) from case for 10s) weight 11.5 (typical) g irh9230 p-channel rad hard avalanche energy and dv/dt rated hexfet ? transistor
electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units t est conditions bv dss drain-to-source breakdown voltage -200 v v gs = 0v, i d = 1.0 ma d bv dss / d t j temperature coefficient of breakdown -0.10 v/c reference to 25c, i d = -1.0 ma voltage r ds(on) static drain-to-source 0.8 v gs = -12v, i d = -4.1a on-state resistance 0.92 w v gs = -12v, i d = -6.5a v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0 ma g fs forward tr ansconductance 2.5 s ( )v ds > -15v, i ds = -6.5a ? i dss zero gate voltage drain current -25 v ds = 0.8 x max. rating,v gs = 0v -250 v ds = 0.8 x max. rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = +20v q g total gate charge 35 v gs = -12v, i d = -6.5a q gs gate-to-source charge 10 v ds = max. rating x 0.5 q gd gate-to-drain (miller) charge 25 t d(on) turn-on delay time 50 v dd = -50v, i d = -6.5a, r g = 7.5 w t r rise time 90 t d(off) turn-off delay time 90 t f fall time 90 l d internal drain inductance 5.0 l s internal source inductance 15 c iss input capacitance 900 v gs = 0v, v ds = -25v c oss output capacitance 250 f = 1.0 mhz c rss reverse transfer capacitance 45 source-drain diode ratings and characteristics parameter min. typ. max. units t est conditions i s continuous source current -6.5 modified mosfet symbol (body diode) showing the integral reverse i sm pulse source current -26 p-n junction rectifier. (body diode) ? v sd diode forw ard voltage -5.0 v t j = 25c, i s = -6.5a, v gs = 0v ? t rr reverse recovery time 400 ns t j = 25c, i f = -6.5a, di/dt -100 a/ m s q rr reverse recovery charge 4.0 m cv dd -14v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . thermal resistance r thjc junction-to-case 1.67 r thja junction-to-ambient 30 irh9230 device pre-radiation w ? m a nc pf nh ns measured from the drain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na parameter min. typ. max. units test conditions k/w ? notes: see page 4 a
irh9230 parameter 100k rads (si) units test conditions ? min. max. bv dss drain-to-source breakdown voltage -200 v gs = 0v, i d = -1.0 ma v gs(th) gate threshold voltage ? -2.0 -4.0 v gs = v ds , i d = -1.0 ma i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v i dss zero gate voltage drain current -25 a v ds = 0.8 x max rating, v gs = 0v r ds(on)1 static drain-to-source ? 0.8 w v gs = -12v, i d = -4.1a on-state resistance one v sd diode forward voltage ? -5.0 v t c = 25c, i s = -6.5a,v gs = 0v international rectifier radiation hardened hexfets are tested to verify their hardness capability. the hardness assurance program at international rectifier uses two radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of -12 volts per note 6 and a v dss bias condition equal to 80% of the device rated voltage per note 7. pre- and post-radiation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1. the v alues in table 1 will be met for either of the two low dose rate test circuits that are used. radiation performance of p-channel rad hard hexfets both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. it should be noted that at a radiation level of 1 x 10 5 rads (si), no change in limits are specified in dc parameters. high dose rate testing may be done on a special request basis, using a dose rate up to 1 x 10 12 rads (si)/sec. international rectifier radiation hardened p-channel hexfets are considered to be neutron-tolerant, as stated in mil-prf-19500 group d. international rectifier p-channel radiation hardened hexfets have been characterized in heavy ion single event effects environment and the results are shown in table 3. irh9230 device radiation characteristics table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test conditions v dss drain-to-source voltage -160 -160 v applied drain-to-source voltage during gamma-dot i pp -12 -12 a peak radiation induced photo-current di/dt -160 -8 a/sec rate of rise of photo-current l 1 1 20 h circuit inductance required to limit di/dt table 3. single event effects ? let (si) fluence range v ds bias v gs bias parameter typ. units ion (mev/mg/cm 2 ) (ions / cm 2 )( m m) (v) (v) bv dss -200 v ni 28 1 x 10 5 ~41 -200 5 v na table 1. low dose rate ? ?
irh9230 device radiation characteristics ? repetitive rating ; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? @ v dd = 50v, starting t j = 25c, e as = [0.5 * l * (i l 2 ) * [bv dss /(bv dss -v dd )] peak i l = -6.5a, v gs = -12v, 25 r g 200 w ? i sd -6.5a, di/dt -140 a/ m s, v dd bv dss , t j 150c suggested r g = 2.35 w ? pulse width 300 m s; duty cycle 2% ? k/w = c/w w/k = w/c ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-radiation) applied and v gs = 0 during irradiation per mll-std-750, method 1019. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? process characterized by independent labor atory. ? all pre-radiation and post-radiation test conditions are identical to facilitate direct comparison for circuit applications. case outline and dimensions dimensions in millimeters and (inches) conforms to jedec outline to-204aa (modified to-3) world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732 020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 3l1, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: 49 61 729 6590 ir italy: via liguria 49, 10071 borgaro, torino tel: 39 11451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo 171 tel: 81 33 983 0641 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 4/96
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